NASA/TM-108510, Volz, M.P. and Mazuruk*, K., Semiconductor Crystal Growth in Crossed Electric and Magnetic Fields - Center Directors Discretionary Fund Final Report (Project No. 93-25), Space Science Laboratory, Science and Engineering Directorate. NASA Marshall Space Flight Center, AL 35812 and *Universities Space Research Association, Huntsville, AL., June 1996, pp. 11, Format(s): PDF 125k |
A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple
was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was
grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.
| Keywords: | electromagnetic fields, semiconductor crystal growth |
|---|---|
| CASI Document ID Number: | 96N29111 |
| Subjects: | Physics: Solid State Pbysics: Superconductivity |
| ID Code: | 344 |
| Deposited On: | 28 June 2002 |